PLASMA IMMERSION ION-IMPLANTATION DOPING EXPERIMENTS FOR MICROELECTRONICS

Using plasma immersion ion implantation (PIII), silicon has been doped with boron in a high voltage pulsed microwave multipolar bucket plasm a system. In order to optimize the system design and predict the dopin g results, a collisional dynamic sheath model has been developed, whic h has been verified by measurements as well as simulations. Silicon de vices, including diode, metaloxide-semiconductor (MOS) capacitor, and PMOS transistor, were fabricated by PIII doping technique. B2H6 dilute d in helium (1%) was used as the gas source. The reasonable contaminat ion levels involved from PIII process were observed by the measurement s of secondary ion mass spectrometry and characteristics of fabricated devices. Good quality of devices has been demonstrated including low reverse current of diode and reasonable lifetimes of the minority carr ier.