PLASMA IMMERSION ION-IMPLANTATION FOR SEMICONDUCTOR THIN-FILM GROWTH

Authors
TUSZEWSKI M SCHEUER JT CAMPBELL IH LAURICH BK
Citation
M. Tuszewski et al., PLASMA IMMERSION ION-IMPLANTATION FOR SEMICONDUCTOR THIN-FILM GROWTH, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(2), 1994, pp. 973-976
Citations number
11
Categorie Soggetti
Physics, Applied
Journal title
Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena → ACNP
ISSN journal
10711023
Volume
12
Issue
2
Year of publication
1994
Pages
973 - 976
Database
ISI
SICI code
1071-1023(1994)12:2<973:PIIFST>2.0.ZU;2-T
Abstract
A new experiment has been constructed to explore the potential of the plasma immersion ion implantation technique for thin film growth on se miconductor substrates. The experiment consists of an inductive plasma source, an ultrahigh vacuum vessel, and a 10 kV pulse generator. The first nitrogen and oxygen plasma results obtained with the inductive s ource are presented and analyzed.