GROWTH OPTIMIZATION OF MOLECULAR-BEAM EPITAXY-GROWN INALAS ON INP

Authors
CHOI WY FONSTAD CG
Citation
Wy. Choi et Cg. Fonstad, GROWTH OPTIMIZATION OF MOLECULAR-BEAM EPITAXY-GROWN INALAS ON INP, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(2), 1994, pp. 1013-1015
Citations number
7
Categorie Soggetti
Physics, Applied
Journal title
Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena → ACNP
ISSN journal
10711023
Volume
12
Issue
2
Year of publication
1994
Pages
1013 - 1015
Database
ISI
SICI code
1071-1023(1994)12:2<1013:GOOMEI>2.0.ZU;2-B
Abstract
The effects of different molecular beam epitaxy (MBE) growth condition s on material qualities of In0.52Al0.48As on InP were investigated. In vestigated parameters were growth temperature and As overpressure. A r ange of these two parameters within which InAlAs grows under the As-ri ch condition was first determined by reflection high-energy electron d iffraction. Five different InAlAs samples were grown within this range and characterized by double crystal x-rav diffraction, Hall measureme nt, and photoluminescence. Based on the results of these characterizat ions, the optimal MBE growth condition for InAlAs was determined.