REALIZATION OF 3-DIMENSIONALLY CONFINED STRUCTURES VIA ONE-STEP IN-SITU MOLECULAR-BEAM EPITAXY ON APPROPRIATELY PATTERNED GAAS(111)B AND GAAS(001)

Authors
RAJKUMAR KC MADHUKAR A CHEN P KONKAR A CHEN L RAMMOHAN K RICH DH
Citation
Kc. Rajkumar et al., REALIZATION OF 3-DIMENSIONALLY CONFINED STRUCTURES VIA ONE-STEP IN-SITU MOLECULAR-BEAM EPITAXY ON APPROPRIATELY PATTERNED GAAS(111)B AND GAAS(001), Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(2), 1994, pp. 1071-1074
Citations number
8
Categorie Soggetti
Physics, Applied
Journal title
Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena → ACNP
ISSN journal
10711023
Volume
12
Issue
2
Year of publication
1994
Pages
1071 - 1074
Database
ISI
SICI code
1071-1023(1994)12:2<1071:RO3CSV>2.0.ZU;2-J
Abstract
The realization of three-dimensionally confined GaAs/AlGaAs structures on GaAs (111)B and GaAs (001) substrates via one step in situ molecul ar beam epitaxy is reported. Growth is carried out on nonplanar patter ned substrates with crystallographically equivalent mesa top edges. Eq uivalent side facets evolve during growth and completely surround the mesa top. Adatom migration from these facets to the mesa top result in shrinkage of the mesa top area leading to mesa pinch-off. Scanning an d transmission electron microscopy provide evidence for the realizatio n of structures with lateral linear dimensions less than or similar 50 0 angstrom. Cathodoluminescence images from the (111)B structures atte st to their high optical quality.