CHEMICAL BEAM EPITAXY OF STRAIN BALANCED GAP GAAS/INP/GAAS SUPERLATTICES/

This work addresses the chemical beam epitaxy (CBE) growth and interfa ce properties of a new type of GaP(n)/GaAs(m)/InP(n)/GaAs(k) pseudomor phically strained superlattice structures. The structural properties o f these highly strained heterostructures are discussed in light of hig h-resolution x-ray diffraction and transmission electron microscopy ob servations. In spite of the large lattice mismatch between the individ ual GaP, GaAs, and InP layers in the superlattice structures, it is de monstrated that due to a nearly perfect strain balance between GaP (in extension) and InP (in compression) layers, GaP/GaAs/InP/GaAs superla ttices with thicknesses up to 1 mum can be achieved with CBE.