MIGRATION-ENHANCED EPITAXY AND OPTICAL-PROPERTIES OF ZNSE CDSE DIGITAL ALLOY QUANTUM-WELLS/

Authors
SHORT SW LUO H XIN S YIN A PAREEK A DOBROWOLSKA M FURDYNA JK
Citation
Sw. Short et al., MIGRATION-ENHANCED EPITAXY AND OPTICAL-PROPERTIES OF ZNSE CDSE DIGITAL ALLOY QUANTUM-WELLS/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(2), 1994, pp. 1143-1145
Citations number
5
Categorie Soggetti
Physics, Applied
Journal title
Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena → ACNP
ISSN journal
10711023
Volume
12
Issue
2
Year of publication
1994
Pages
1143 - 1145
Database
ISI
SICI code
1071-1023(1994)12:2<1143:MEAOOZ>2.0.ZU;2-9
Abstract
We report the growth of ZnSe/CdSe digital alloy quantum wells by migra tion enhanced epitaxy. The well regions are imbedded in barriers of Zn Se, and are composed of various periods of 1 monolayer (ML) of CdSe an d 3 ML of ZnSe, thus having an effective Cd concentration of 25%. The time and sequence of successive shutter openings was varied during gro wth, and the effects on layer coverage were investigated using reflect ion high-energy electron diffraction oscillations, photoluminescence, photoluminescence excitation, and optical absorption.