ROOM-TEMPERATURE PHOTOLUMINESCENCE IN STRAINED SI1-XGEX SI QUANTUM-WELLS/

Authors
FUKATSU S SUNAMURA H SHIRAKI Y
Citation
S. Fukatsu et al., ROOM-TEMPERATURE PHOTOLUMINESCENCE IN STRAINED SI1-XGEX SI QUANTUM-WELLS/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(2), 1994, pp. 1160-1162
Citations number
18
Categorie Soggetti
Physics, Applied
Journal title
Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena → ACNP
ISSN journal
10711023
Volume
12
Issue
2
Year of publication
1994
Pages
1160 - 1162
Database
ISI
SICI code
1071-1023(1994)12:2<1160:RPISSS>2.0.ZU;2-2
Abstract
Photoluminescence (PL) observation at room temperature is reported in strained Si1-xGex/Si multiple quantum wells (MQWs) grown by gas source Si molecular beam epitaxy. It was found that QW PL is enhanced when M QWs are arranged so that photogenerated carriers are trapped efficient ly to QWs without significant loss. This was achieved by locating MQWs over the penetration depth of the excitation light. QW PL was found t o develop with a power exponent of 1.8 for lower excitation. QW PL was observed at room temperature for MQW samples with x up to 0.69.