SOME DOPING RESULTS IN ZNSE GROWN BY MOLECULAR-BEAM EPITAXY

Comparison studies of N-doping of ZnSe for (100) and (311)A orientatio ns have been performed. The C-V measurements indicated that the doping level of the samples grown on (311)A is higher than that of the sampl es on (100). Doping experiments using Zn3As2 as As-doping source evapo rated by a Knudsen effusion cell also have been performed. Low-tempera ture photoluminescence measurements revealed evidence of shallow accep tor bound excitons, indicating that some of the As is being incorporat ed as shallow levels. It is also pointed out that group V monomers suc h as As and P are promising p-type dopants.