Jm. Vanhove et al., CARBON DOPING BY A COMPACT ELECTRON-BEAM SOURCE, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(2), 1994, pp. 1200-1202
Carbon doping in III-V compounds has generated much attention because
Of applications in high temperature and high current devices. We prese
nt results using a novel electron beam carbon source for doping GaAs a
nd GaSb. The source construction allows normal effusion cell geometry
and utilizes electron bombardment for evaporation from a carbon rod. M
ass spectrometer data showed the carbon flux contained C1, C2, and C3
Species. For GaAs, controllable hole doping densities between 3x10(15)
cm-3 and 5x10(19) were obtained. For GaSb, carbon doping resulted in
P-type material with hole densities ranging from the background level
of 2x10(16) to 3X10(20) cm-3 for specular film morphology. Hole mobili
ty values for GaAs and GaSb are comparable to published data.