CARBON DOPING BY A COMPACT ELECTRON-BEAM SOURCE

Citation
Jm. Vanhove et al., CARBON DOPING BY A COMPACT ELECTRON-BEAM SOURCE, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(2), 1994, pp. 1200-1202
Citations number
11
Categorie Soggetti
Physics, Applied
ISSN journal
10711023
Volume
12
Issue
2
Year of publication
1994
Pages
1200 - 1202
Database
ISI
SICI code
1071-1023(1994)12:2<1200:CDBACE>2.0.ZU;2-4
Abstract
Carbon doping in III-V compounds has generated much attention because Of applications in high temperature and high current devices. We prese nt results using a novel electron beam carbon source for doping GaAs a nd GaSb. The source construction allows normal effusion cell geometry and utilizes electron bombardment for evaporation from a carbon rod. M ass spectrometer data showed the carbon flux contained C1, C2, and C3 Species. For GaAs, controllable hole doping densities between 3x10(15) cm-3 and 5x10(19) were obtained. For GaSb, carbon doping resulted in P-type material with hole densities ranging from the background level of 2x10(16) to 3X10(20) cm-3 for specular film morphology. Hole mobili ty values for GaAs and GaSb are comparable to published data.