DETERMINATION OF MOLECULAR-BEAM EPITAXIAL-GROWTH PARAMETERS BY ELLIPSOMETRY

Authors
DROOPAD R KUO CH ANAND S CHOI KY MARACAS GN
Citation
R. Droopad et al., DETERMINATION OF MOLECULAR-BEAM EPITAXIAL-GROWTH PARAMETERS BY ELLIPSOMETRY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(2), 1994, pp. 1211-1213
Citations number
14
Categorie Soggetti
Physics, Applied
Journal title
Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena → ACNP
ISSN journal
10711023
Volume
12
Issue
2
Year of publication
1994
Pages
1211 - 1213
Database
ISI
SICI code
1071-1023(1994)12:2<1211:DOMEPB>2.0.ZU;2-D
Abstract
The use of ellipsometry as an alternative technique for in situ determ ination of molecular beam epitaxial growth parameters has been demonst rated. Epitaxial growth has been monitored in real time using three di screte wavelengths to extract growth rates and alloy composition. The effect of substrate rotation on the measured growth rates has also bee n determined by this technique. From measurements of the GaAs growth r ates versus substrate temperature, a value of 4.68+/-0.12 eV for the a ctivation energy for Ga desorption during GaAs growth was obtained. Th is agrees with values obtained by other measurement techniques.