FACTORS AFFECTING THE TEMPERATURE UNIFORMITY OF SEMICONDUCTOR SUBSTRATES IN MOLECULAR-BEAM EPITAXY

Authors
JOHNSON SR LAVOIE C NODWELL E NISSEN MK TIEDJE T MACKENZIE JA
Citation
Sr. Johnson et al., FACTORS AFFECTING THE TEMPERATURE UNIFORMITY OF SEMICONDUCTOR SUBSTRATES IN MOLECULAR-BEAM EPITAXY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(2), 1994, pp. 1225-1228
Citations number
11
Categorie Soggetti
Physics, Applied
Journal title
Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena → ACNP
ISSN journal
10711023
Volume
12
Issue
2
Year of publication
1994
Pages
1225 - 1228
Database
ISI
SICI code
1071-1023(1994)12:2<1225:FATTUO>2.0.ZU;2-O
Abstract
The temperature of GaAs substrates is profiled in a molecular-beam epi taxy system with a spatial resolution of 3 mm and a thermal resolution of 0.4-degrees-C, respectively. The effects of substrate doping, back surface textures, thermal contact to the holder, and a pyrolytic boro n nitride diffuser plate, on the temperature uniformity, are explored for indium-free mounted substrates. Both positive and negative curvatu re temperature profiles are observed.