GROWTH OF GAAS LIGHT MODULATORS ON SI BY GAS-SOURCE MOLECULAR-BEAM EPITAXY FOR 850 NM OPTICAL INTERCONNECTS

The growth of GaAs quantum well modulators on Si for photonic switchin g applications is reported. Comparison of modulator's quantum confined Stark effect atop different miscut Si surfaces demonstrate the need f or a highly ordered array of bilayer steps as an initial Si surface co ndition for heteroepitaxy. Proton implantation into the SiO2/Si system via an electron cyclotron resonance plasma to lower the Si oxide deso rption temperature, while perserving step ordering of the surface, is explored.