CHEMICAL BEAM EPITAXY OF INP-BASED SOLAR-CELLS AND TUNNEL-JUNCTIONS

Authors
VILELA MF ROSSIGNOL V BENSAOULA A MEDELCI N FREUNDLICH A
Citation
Mf. Vilela et al., CHEMICAL BEAM EPITAXY OF INP-BASED SOLAR-CELLS AND TUNNEL-JUNCTIONS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(2), 1994, pp. 1251-1253
Citations number
11
Categorie Soggetti
Physics, Applied
Journal title
Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena → ACNP
ISSN journal
10711023
Volume
12
Issue
2
Year of publication
1994
Pages
1251 - 1253
Database
ISI
SICI code
1071-1023(1994)12:2<1251:CBEOIS>2.0.ZU;2-C
Abstract
Chemical beam epitaxy has been utilized to demonstrate high efficiency InGaAs/InP tandem solar cells on InP substrates. The key development in achieving such tandems is the growth of high peak current density I nGaAs tunnel junctions for use as interconnect between the top and bot tom cells. The growth and performance of the InGaAs bottom cell, the I nGaAs tunnel junction, and the InP top cell are first independently pr esented in the paper. Then the growth of an InP-based tandem cell is d escribed followed by a discussion of its performance.