MOLECULAR-BEAM EPITAXY GROWTH OF PSEUDOMORPHIC II-VI MULTILAYERED STRUCTURES FOR BLUE-GREEN LASER-DIODES AND LIGHT-EMITTING-DIODES

This article reports results involving the molecular beam epitaxial gr owth of the quaternary (Zn,Mg)(S,Se) compound as well as the incorpora tion of this quaternary into a pseudomorphic separate confinement hete rostructure laser diode configuration. It was found that the quaternar y (Zn,Mg) (S,Se) can accommodate much more strain as compared to binar y ZnSe; the films remained essentially pseudomorphic, with low defect densities, for strains in the studied range from -0.225% (tension) to 0.137% (compression) at room temperature. The relationship between the surface morphology and the strain is also described in this paper. La sing was routinely obtained at room temperature under pulsed injection . A threshold lasing voltage of as low as 7 V was observed in index-gu ided diode lasers.