HIGH-QUALITY STRAINED QUANTUM WIRES GROWN BY MOLECULAR-BEAM EPITAXY ON (100) GAAS SUBSTRATE

High-radiative recombination efficiency arrays of InGaAs/GaAs strained quantum wires have been fabricated by a combination of e-beam lithogr aphy, dry and wet etching, sidewall desorption, migration-enhanced epi taxial and molecular beam epitaxial regrowth. The structure was evalua ted by reflection high-energy electron diffraction, cross-sectional tr ansmission electron microscopy, and photoluminescence spectroscopy. Tr ansmission electron microscopy study showed that a defect-free regrown layer and excellent sidewall coverage have been attained. From the ph otoluminescence measurement, the sample showed high-radiative efficien cy, and had strong photoluminescence for wire widths down to 190 nm.