STUDY OF ELECTRON-BEAM EFFECTS ON TRIMETHYLSILANE COVERED SI(100)

Citation
Mv. Ascherl et al., STUDY OF ELECTRON-BEAM EFFECTS ON TRIMETHYLSILANE COVERED SI(100), Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 13(6), 1995, pp. 2721-2725
Citations number
16
Categorie Soggetti
Physics, Applied","Materials Science, Coatings & Films
ISSN journal
07342101
Volume
13
Issue
6
Year of publication
1995
Pages
2721 - 2725
Database
ISI
SICI code
0734-2101(1995)13:6<2721:SOEEOT>2.0.ZU;2-9
Abstract
Electron-stimulated desorption (ESD) and temperature programmed desorp tion (TPD) studies were conducted on trimethylsilane dosed Si(100) sur faces. Experiments investigating the effects of electron-beam irradiat ion on TPD spectra and ESD kinetic energy distributions of hydrogen fr om trimethylsilane covered Si(100) surfaces are reported. Electron-bea m irradiation strongly influences subsequent TPD spectra. Electron-bea m induced dissociation of physisorbed particles on the surface is demo nstrated. It is concluded that electron irradiation of trimethylsilane covered Si(100) selectively enhances or induces specific hydrogen ads orbed states when physisorbed species are present on the surface. (C) 1995 American Vacuum Society.