E. Meeks et al., EFFECTS OF ATOMIC CHLORINE WALL RECOMBINATION - COMPARISON OF A PLASMA CHEMISTRY MODEL WITH EXPERIMENT, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 13(6), 1995, pp. 2884-2889
Citations number
22
Categorie Soggetti
Physics, Applied","Materials Science, Coatings & Films
Results from a plasma chemistry model provide predictions of spatially
and temporally averaged plasma properties. Application of the model t
o chlorine-etch process conditions, typical of a high plasma-density t
ransformer coupled plasma reactor, provides plasma composition depende
nce on reactor operating parameter such as power and pressure. Model r
esults also show the dependence of species concentrations on the atomi
c-chlorine recombination rate at reactor walls. Comparison of model pr
edictions to measured composition trends as determined by Langmuir pro
be, actinometry, and ion-energy analysis reveals a critical wall-recom
bination probability of about 0.1 for chlorine atoms on a chlorinated
anodized-aluminum surface. Ar or above this critical value, the model
reproduces the experimentally observed trends, while employing a recom
bination probability below this value results in predictions that are
inconsistent with the data. The model determines gas-phase and surface
-species compositions in plasma-etch reactors through the solution of
species, mass. electron-energy, and surface-site conservation equation
s. The use of well mixed reactor approximations reduces the computatio
nal expense of detailed kinetics calculations and allows investigation
into the dependence of plasma chemistry on uncertain kinetic paramete
rs. The dominance of surface reaction rates in determining plasma prop
erties is expected to be equally important in more complex two-dimensi
onal inductively coupled plasma models due to the highly diffuse natur
e of these low-pressure reactors. (C) 1995 American Vacuum Society.