ELECTROCRYSTALLIZATION AND CHARACTERIZATION OF CUINSE2 THIN-FILMS

CuInSe2 thin films were deposited on Mo substrates by electrodepositio n from aqueous solution containing the mixture of CuSO4, InCl3 and SeO 2 by potentiostatic technique. The co-deposition conditions were optim ized by drawing the voltammogram along with the Pourbaix diagrams. The deposition was carried out by varying the cathode potential from -0.2 to -0.8 V to obtain the co-deposition region of CuInSe2. As-grown and annealed films were structurally characterized by the X-ray diffracti on (XRD) technique. The results reveal that as-deposited films contain CuInSe2, Cu3Se2, In6Se7 and Se. XRD studies show that the effect of a nnealing at 350 degrees C in N-2 atmosphere results in the good struct ural formation of CuInSe2 chalcopyrite structure. A linear relationshi p exists between the quantity of charge passed during the deposition a nd mass of deposition of CuInSe2 on Mo substrate for a particular co-d eposition region. The experimental conditions and the results are brie fly analysed.