HALIDE CHEMICAL-VAPOR-DEPOSITION OF BI2SR2CACU2O8- ASPECTS OF EPITAXY(X )

Citation
P. Martensson et A. Harsta, HALIDE CHEMICAL-VAPOR-DEPOSITION OF BI2SR2CACU2O8- ASPECTS OF EPITAXY(X ), Journal of crystal growth, 156(1-2), 1995, pp. 67-73
Citations number
19
Categorie Soggetti
Crystallography
Journal title
ISSN journal
00220248
Volume
156
Issue
1-2
Year of publication
1995
Pages
67 - 73
Database
ISI
SICI code
0022-0248(1995)156:1-2<67:HCOBAO>2.0.ZU;2-O
Abstract
The superconducting Bi2Sr2CaCu2O8+x phase has been deposited bg halide chemical vapour deposition (CVD) on three different substrate materia ls, MgO(001), SrTiO3(001) and LaAlO3(001). Metal iodides and oxygen we re used as precursors. The films were found to grow with a strong [001 ] orientation and only the 001 reflections with l = 2n were observed, with rocking curve fwhm values of about 0.3 degrees in theta. The in-p lane orientational relationships were determined by phi-scans for all three substrate materials. These relationships were found to be [100]( MgO) parallel to[100](Bi-2212) for the MgO(001) substrate and [100](su bstrate)parallel to[110](Bi-2212) for the SrTiO3(001) and LaAlO3(001) substrates. The results are in good agreement with other determination s of the in-plane orientational relationships.