HETEROGENEOUS NUCLEATION OF PLANAR DEFECTS IN MN-DOPED ZNSE GAAS/

A heterogeneous source for the nucleation of inclined planar defects w ithin a Mn-doped ZnSe/GaAs epitaxial layer grown by metalorganic vapou r phase epitaxy is identified as MnSe particles at the ZnSe/GaAs inter face (it is possible that the particles contain up to 6% Zn). The MnSe particles have the rock-salt crystal structure and are randomly distr ibuted along the interface. The planar defects emanate from the rough interface between ZnSe and the particles and nucleation is probably me diated by the 3.8% lattice misfit between ZnSe and MnSe.