MOLECULAR-BEAM EPITAXIAL-GROWTH OF INSB GAAS(100) AND INSB/SI(100) HETEROEPITAXIAL LAYERS (THERMODYNAMIC ANALYSIS AND CHARACTERIZATION)/

In this paper we present the detailed thermodynamic analysis and exper imental study on the MBE growth process of heteroepitaxial InSb layers on strongly lattice-mismatched GaAs(100) and Si(100) substrates. A go od qualitative agreement between theoretical and experimental results has been obtained. The influence of growth parameters (T-sub, Sb-4/In flow ratio) on the structural, electrical, and luminescence characteri stics of the layers has been also investigated. The increase of T-sub from 350 to 420 degrees C together with the Sb-4/In flow ratio reducti on result in a mirror-like surface morphology, decrease in X-ray rocki ng curve FWHM values and dislocation density down to 210 arcsec and 1 x 10(8) cm(-2), respectively, and the disappearance of stacking faults . It also provides a lower unintentional doping level(n similar to 2.8 x 10(16) cm(-3)) in undoped layers and a higher electron mobility (51 000 cm(2)/V . s at 300 K and 36000 cm(2)/V s at 77 K). Using Be as a p -type dopant has been shown to enable to reach readily the Be doping l evel of InSb/GaAs and InSb/Si as high as 2 x 10(19) cm(-3).