TEMPERATURE-INDEPENDENT TRANSCONDUCTANCE IN 0.05 MU-M-GATE ALGAAS GAAS MODFET/

Temperature-independent transconductance has been observed in a 0.05 m u m-gate AlGaAs/GaAs MODFET. The fabricated device has been provided w ith 0.15 mu m-deep and 0.25 mu m-wide gate-recess structure where the high electric field more than 1 x 10(5) V/cm and the short electron tr ansporting time less than 0.15 ps can be attained at the applied drain voltage of 3 V. Using simple short-channel device modeling, the elect ron velocity of the present device is extracted to be 8.2 x 10(7) cm/s which is independent of temperature. These results suggest that the e lectrons are transported without scattering in the present 0.05 mu m-g ate AlGaAs/GaAs MODFET.