SELECTIVE REACTIVE ION ETCHING OF PECVD SILICON-NITRIDE OVER AMORPHOUS-SILICON IN CF4 H-2 AND NITROGEN-CONTAINING CF4/H-2 PLASMA GAS-MIXTURES/

Authors
KUMAR MJ CHAMBERLAIN SG
Citation
Mj. Kumar et Sg. Chamberlain, SELECTIVE REACTIVE ION ETCHING OF PECVD SILICON-NITRIDE OVER AMORPHOUS-SILICON IN CF4 H-2 AND NITROGEN-CONTAINING CF4/H-2 PLASMA GAS-MIXTURES/, Solid-state electronics, 39(1), 1996, pp. 33-37
Citations number
34
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied","Physics, Condensed Matter
Journal title
Solid-state electronics → ACNP
ISSN journal
00381101
Volume
39
Issue
1
Year of publication
1996
Pages
33 - 37
Database
ISI
SICI code
0038-1101(1996)39:1<33:SRIEOP>2.0.ZU;2-E
Abstract
In this paper, we report a highly selective dry etching process for pl asma chemical vapour deposited silicon nitride over undoped and n(+)-d oped amorphous silicon. Dry etching is carried out in both CF4/H-2 and nitrogen containing CF4/H-2 plasma gas mixtures. The effect of pressu re, H-2 and N-2 concentration on etch behaviour and selectivity is inv estigated. We report selectivities in the range of 2-40 for the differ ential etching of silicon nitride over doped/undoped amorphous silicon by using CF4/H-2 plasma gas combination. Higher etch rates with nitro gen containing CF4/H-2 are observed.