A SILICON-ON-INSULATOR QUANTUM-WIRE

Authors
COLINGE JP BAIE X BAYOT V GRIVEI E
Citation
Jp. Colinge et al., A SILICON-ON-INSULATOR QUANTUM-WIRE, Solid-state electronics, 39(1), 1996, pp. 49-51
Citations number
7
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied","Physics, Condensed Matter
Journal title
Solid-state electronics → ACNP
ISSN journal
00381101
Volume
39
Issue
1
Year of publication
1996
Pages
49 - 51
Database
ISI
SICI code
0038-1101(1996)39:1<49:ASQ>2.0.ZU;2-C
Abstract
Thin, narrow silicon-on-insulator n-channel MOSFETs have been fabricat ed. The drain current characteristics, when measured as a function of gate voltage at low temperature, exhibit a series of oscillations, whi ch is characteristic of current transport in one-dimensional systems ( quantum wires). Theoretical calculation of the current oscillations in the device show reasonable agreement with the experimental characteri stics.