MODELING OF HOLE CONFINEMENT GATE VOLTAGE RANGE FOR SIGE CHANNEL P-MOSFETS

An analytical model of hole confinement gate voltage range is derived for SiGe-channel p-MOSFETs and verified by SEDAN-3 simulation. The hol e confinement gate voltage range is shown to be a function of threshol d voltage, gate oxide thickness to Si cap thickness ratio, gate materi al, and Ge mole fraction. Si cap should be thinned with device scaling and power supply decreasing to keep the same hole confinement so as t o realise full bias range SiGe-channel operation. It is clarified that various bulk and SOI SiGe p-MOSFETs have the same hole confinement un der the same threshold voltage.