MODELING OF HOT-CARRIER-STRESSED CHARACTERISTICS OF NMOSFETS

This paper presents a new degraded drain current model for nMOSFETs wi th hot-carrier-induced interface states. The model was developed by st arting from a two-dimensional Poisson's equation and including the eff ects of series resistances, carrier velocity saturation, and hot-carri er-induced interface states. The nonuniform spatial distribution of in terface states is also accounted for in the model. The fitting results show good agreement between the model and the experimental data. The model provides a physics-based approach for modeling forward and rever se MOSFET characteristics with hot-carrier-induced damage and can be e asily applied to simulation of device behavior after hot-carrier stres s for assessment and improvement of long-term device or circuit reliab ility.