THE EFFECT OF SERIES RESISTANCE ON THRESHOLD VOLTAGE MEASUREMENT TECHNIQUES FOR FULLY DEPLETED SOI MOSFETS

Accurate measurement of the threshold voltage of fully depleted SOI MO SFETs is limited by the high values of series resistance that occur du e to the thin film nature of the material. This work examines the effe ct of series resistance on three techniques, one of which was extended here for the first time for use with SOI MOSFETs. The new technique i s particularly useful because it allows the extraction of the threshol d voltage parameter corresponding to the most widely used SOI MOSFET m odel. The effect that series resistance has on the measured threshold voltage is discussed alongside the validity of extending bulk MOSFET m easurement techniques for use with SOI MOSFETs. The new method is show n to be more accurate than the existing linear method for extracting t he SOISPICE definition of threshold voltage.