1 F NOISE AS A PREDICTION OF LONG-TERM INSTABILITY IN INTEGRATED OPERATIONAL-AMPLIFIERS/

It is shown from the accelerated life test and noise measurement that the long-term instability of integrated operational amplifiers due to the drift of input bias/offset current is strongly correlated with 1/f noise in the devices, and the current drift is approximately proporti onal to 1/f noise current measured before the test. In the mechanism a nalysis, the instability and the 1/f noise may be attributed to the sa me physical source and both are caused by the modulation of oxide trap s to Si surface carriers. 1/f noise measurement may therefore be appli ed as a fast and nondestructive tool to predict the long-term instabil ity of operational amplifiers.