Yq. Zhuang et S. Qing, 1 F NOISE AS A PREDICTION OF LONG-TERM INSTABILITY IN INTEGRATED OPERATIONAL-AMPLIFIERS/, Microelectronics and reliability, 36(2), 1996, pp. 189-193
It is shown from the accelerated life test and noise measurement that
the long-term instability of integrated operational amplifiers due to
the drift of input bias/offset current is strongly correlated with 1/f
noise in the devices, and the current drift is approximately proporti
onal to 1/f noise current measured before the test. In the mechanism a
nalysis, the instability and the 1/f noise may be attributed to the sa
me physical source and both are caused by the modulation of oxide trap
s to Si surface carriers. 1/f noise measurement may therefore be appli
ed as a fast and nondestructive tool to predict the long-term instabil
ity of operational amplifiers.