A NEW DC MODEL OF HBT INCLUDING SELF-HEATING EFFECT SUITABLE FOR CIRCUIT SIMULATORS

Authors
DUPUIS J HAJJI R GHANNOUCHI FM SAAB K LAVALLEE S
Citation
J. Dupuis et al., A NEW DC MODEL OF HBT INCLUDING SELF-HEATING EFFECT SUITABLE FOR CIRCUIT SIMULATORS, I.E.E.E. transactions on electron devices, 42(12), 1995, pp. 2036-2042
Citations number
7
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
Journal title
I.E.E.E. transactions on electron devices → ACNP
ISSN journal
00189383
Volume
42
Issue
12
Year of publication
1995
Pages
2036 - 2042
Database
ISI
SICI code
0018-9383(1995)42:12<2036:ANDMOH>2.0.ZU;2-O
Abstract
This paper presents a new empirical DC model which includes self-heati ng effects, The expression of the collector current does not explicitl y incorporate the junction temperature of the device to aid convergenc e process and to simplify the equations involved, A comparison of simu lated and experimental DC-IV characteristics over the ohmic and active regions demonstrates the accuracy of the model, This model is suitabl e for optimization purposes and has been implemented in nonlinear circ uit simulators, HSPICE and HP-MDS.