DEVICE PARAMETERS EXTRACTION IN SEPARATE ABSORPTION, GRADING, CHARGE,AND MULTIPLICATION INP INGAAS AVALANCHE PHOTODIODES/

In this paper, we report a simple, innovative, fast, accurate, and non destructive technique for extracting two critical device parameters-mu ltiplication layer thickness x(d) and integrated areal charge density sigma(active) in separate absorption, grading, charge, and multiplicat ion (SAGCM) InP/InGaAs avalanche photodiodes (APD's), using punchthrou gh and breakdown voltages obtained from de photocurrent measurements, We consider in detail the systematic uncertainties due both to the neg lect of ionization in the absorption and charge layers, and to differe nt ionization rates in InP reported in the literature, We also conside r random errors caused by uncertainties from experiments and other dev ice parameters, The combined error for x(d) is < 0.05 mu m, and for si gma(active) is < 3%, and these errors are smaller than errors associat ed with x(d) and sigma(active) determined using current techniques of secondary ion mass spectroscopy (SIMS) and Hall analysis, which are de structive and/or require separate calibration wafers.