SUPPRESSION OF PARASITIC BIPOLAR EFFECTS AND OFF-STATE LEAKAGE IN FULLY-DEPLETED SOI N-MOSFETS USING GE-IMPLANTATION

This work demonstrates a well-controlled technique of channel defect e ngineering, by implanting germanium into the channel of a Silicon-On-I nsulator (SOI) MOSFET to generate subgap energy states, These subgap s tates act as minority-carrier lifetime killers to spoil the parasitic bipolar gain, and thus improve the source-to-drain breakdown voltage a nd reduce the front-channel gate-induced-drain-leakage (GIDL), The Ge- implant also serves the dual purpose of positioning most of the subgap states in the back interface region which reduce back-channel off-sta te leakage.