Ck. Yang et al., CHARACTERISTICS OF TOP-GATE THIN-FILM TRANSISTORS FABRICATED ON NITROGEN-IMPLANTED POLYSILICON FILMS, I.E.E.E. transactions on electron devices, 42(12), 1995, pp. 2163-2169
The electrical characteristics of top-gate thin-film transistors (TFT'
s) fabricated on the nitrogen-implanted polysilicon of the doses rangi
ng from 2 x 10(12)-2 x 10(14) ions/cm(2) were investigated in this wor
k, The experimental results showed that nitrogen implanted into polysi
licon followed by an 850 degrees C 1 h annealing step had some passiva
tion effect and this effect was much enhanced by a following H-2-plasm
a treatment. The threshold voltages, subthreshold swings, ON-OFF curre
nt ratios, and field effect mobilities of both n-channel and p-channel
TFT's were all improved, Moreover, the hot-carrier reliability was al
so improved, A donor effect of the nitrogen in polysilicon was also fo
und which affected the overall passivation effect on the p-channel TFT
's.