T. Suemasu et al., THEORETICAL AND MEASURED CHARACTERISTICS OF METAL(COSI2)-INSULATOR(CAF2) RESONANT-TUNNELING TRANSISTORS AND THE INFLUENCE OF PARASITIC ELEMENTS, I.E.E.E. transactions on electron devices, 42(12), 1995, pp. 2203-2210
We report on the theoretical and measured characteristics of triple-ba
rrier metal(CoSi2)-insulator(CaF2) (M-I) resonant tunneling transistor
s (RTT) grown on an n-Si(111) substrate, and the influence of their pa
rasitic elements on the measured characteristics. First, we analyze th
eoretical characteristics of an M-I RTT, and then show fabrication pro
cess and current-voltage (I-V) characteristics obtained at 77 K, in wh
ich several degradations are observed: large resonance voltage, low pe
ak-to-valley (P-V) ratios at negative differential resistance (NDR), a
nd reverse base current, Analysis, taking several parasitic elements (
e,g,, base resistance, substrate resistance and leakage currents conne
cted to the intrinsic transistor) into account, explains observed char
acteristics well, Finally, we show the first transistor action with la
rge P-V ratios at 300 K, which is achieved by reducing collector-emitt
er leakage currents.