THEORETICAL AND MEASURED CHARACTERISTICS OF METAL(COSI2)-INSULATOR(CAF2) RESONANT-TUNNELING TRANSISTORS AND THE INFLUENCE OF PARASITIC ELEMENTS

We report on the theoretical and measured characteristics of triple-ba rrier metal(CoSi2)-insulator(CaF2) (M-I) resonant tunneling transistor s (RTT) grown on an n-Si(111) substrate, and the influence of their pa rasitic elements on the measured characteristics. First, we analyze th eoretical characteristics of an M-I RTT, and then show fabrication pro cess and current-voltage (I-V) characteristics obtained at 77 K, in wh ich several degradations are observed: large resonance voltage, low pe ak-to-valley (P-V) ratios at negative differential resistance (NDR), a nd reverse base current, Analysis, taking several parasitic elements ( e,g,, base resistance, substrate resistance and leakage currents conne cted to the intrinsic transistor) into account, explains observed char acteristics well, Finally, we show the first transistor action with la rge P-V ratios at 300 K, which is achieved by reducing collector-emitt er leakage currents.