A SELF-ALIGNED TRENCHED CATHODE LATERAL INSULATED GATE BIPOLAR-TRANSISTOR WITH HIGH LATCH-UP RESISTANCE

Authors
MOK PKT NEZAR A SALAMA CAT
Citation
Pkt. Mok et al., A SELF-ALIGNED TRENCHED CATHODE LATERAL INSULATED GATE BIPOLAR-TRANSISTOR WITH HIGH LATCH-UP RESISTANCE, I.E.E.E. transactions on electron devices, 42(12), 1995, pp. 2236-2239
Citations number
15
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
Journal title
I.E.E.E. transactions on electron devices → ACNP
ISSN journal
00189383
Volume
42
Issue
12
Year of publication
1995
Pages
2236 - 2239
Database
ISI
SICI code
0018-9383(1995)42:12<2236:ASTCLI>2.0.ZU;2-L
Abstract
This paper discusses a modified insulated gate bipolar transistor (LIG BT) structure using a self-aligned trenched contact at the cathode of the device which significantly reduces the parasitic p-base resistance underneath the n(+) cathode region to suppress the latch-up, The tren ched cathode LIGBT (TC-LIGBT) structure is BiCMOS compatible and the L IGBT's with latching current densities over 1200 A/cm(2) have been obt ained using a 4 mu m technology.