THRESHOLD VOLTAGE AND INVERSION CHARGE MODELING OF GRADED SIGE-CHANNEL MODULATION-DOPED P-MOSFETS

Authors
NIU GF RUAN G
Citation
Gf. Niu et G. Ruan, THRESHOLD VOLTAGE AND INVERSION CHARGE MODELING OF GRADED SIGE-CHANNEL MODULATION-DOPED P-MOSFETS, I.E.E.E. transactions on electron devices, 42(12), 1995, pp. 2242-2246
Citations number
14
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
Journal title
I.E.E.E. transactions on electron devices → ACNP
ISSN journal
00189383
Volume
42
Issue
12
Year of publication
1995
Pages
2242 - 2246
Database
ISI
SICI code
0018-9383(1995)42:12<2242:TVAICM>2.0.ZU;2-T
Abstract
Analytical models of threshold voltage and inversion charge for the gr aded SiGe-channel modulation-doped p-MOSFET's have been derived and ve rified by SEDAN-3 simulation. The effect of threshold voltage adjustme nt on hole confinement, and the increase of SiGe channel hole density under the threshold voltage specified by application circuits are then studied.