MODELING OF ELECTRON-HOLE SCATTERING IN SEMICONDUCTOR-DEVICES - COMMENT

Authors
MNATSAKANOV TT
Citation
Tt. Mnatsakanov, MODELING OF ELECTRON-HOLE SCATTERING IN SEMICONDUCTOR-DEVICES - COMMENT, I.E.E.E. transactions on electron devices, 42(12), 1995, pp. 2251-2253
Citations number
21
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
Journal title
I.E.E.E. transactions on electron devices → ACNP
ISSN journal
00189383
Volume
42
Issue
12
Year of publication
1995
Pages
2251 - 2253
Database
ISI
SICI code
0018-9383(1995)42:12<2251:MOESIS>2.0.ZU;2-Y
Abstract
A review of results on electron-hole scattering in semiconductors and semiconductor devices is presented, It is shown that main relations go verning charge carrier transport in the presence of strong electron-ho le scattering have been established over last 15 years.