PROCESS AND MECHANISM OF GROWTH OF YBA2CU3O6-CRYSTAL BY THE PULLING METHOD(X SINGLE)

Citation
M. Egami et al., PROCESS AND MECHANISM OF GROWTH OF YBA2CU3O6-CRYSTAL BY THE PULLING METHOD(X SINGLE), Journal of electronic materials, 24(12), 1995, pp. 1907-1911
Citations number
8
Categorie Soggetti
Engineering, Eletrical & Electronic","Material Science
ISSN journal
03615235
Volume
24
Issue
12
Year of publication
1995
Pages
1907 - 1911
Database
ISI
SICI code
0361-5235(1995)24:12<1907:PAMOGO>2.0.ZU;2-M
Abstract
Continuous growth of YBa2Cu3O6+x(Y123) single crystals was achieved by the modified pulling method(1) using BaO+CuO(3:5) solvent and Y2BaCuO 5(Y211) solute. Y211 solid was placed at the bottom of the crucible. T emperature was set ten degrees higher at the bottom than on the surfac e of the solution. The crystal rotation speed was 120 rpm at first; bu t as the crystal radius increased, it was reduced to prevent increasin g the interface temperature. The maximum crystal growth rate was about 0.2 mm/h. The crystal growth direction was controlled by the seed cry stal direction.(2) Two-dimensional numerical simulation was performed using a finite-difference method by a supercomputer to investigate the solution flow and temperature distribution.