M. Egami et al., PROCESS AND MECHANISM OF GROWTH OF YBA2CU3O6-CRYSTAL BY THE PULLING METHOD(X SINGLE), Journal of electronic materials, 24(12), 1995, pp. 1907-1911
Continuous growth of YBa2Cu3O6+x(Y123) single crystals was achieved by
the modified pulling method(1) using BaO+CuO(3:5) solvent and Y2BaCuO
5(Y211) solute. Y211 solid was placed at the bottom of the crucible. T
emperature was set ten degrees higher at the bottom than on the surfac
e of the solution. The crystal rotation speed was 120 rpm at first; bu
t as the crystal radius increased, it was reduced to prevent increasin
g the interface temperature. The maximum crystal growth rate was about
0.2 mm/h. The crystal growth direction was controlled by the seed cry
stal direction.(2) Two-dimensional numerical simulation was performed
using a finite-difference method by a supercomputer to investigate the
solution flow and temperature distribution.