ELECTRON-MICROSCOPE STUDIES OF INXGA1-XAS GAAS/SI GROWN BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION/

Authors
KAMEI K STOBBS WM FUJITA K
Citation
K. Kamei et al., ELECTRON-MICROSCOPE STUDIES OF INXGA1-XAS GAAS/SI GROWN BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION/, Journal of electronic materials, 24(12), 1995, pp. 2025-2031
Citations number
16
Categorie Soggetti
Engineering, Eletrical & Electronic","Material Science
Journal title
Journal of electronic materials → ACNP
ISSN journal
03615235
Volume
24
Issue
12
Year of publication
1995
Pages
2025 - 2031
Database
ISI
SICI code
0361-5235(1995)24:12<2025:ESOIGG>2.0.ZU;2-L
Abstract
The microstructure of InxGa1-xAs/GaAs (5nm/5 nm, x=0 to 1.0), as grown by a metalorganic chemical vapor deposition two-step growth technique on Si(100) at 450 degree C, and subsequently annealed at 750 degree C , is investigated using plan-view and cross-sectional transmission ele ctron microscopy. The variations in resultant island morphology and st rain as a function of the In content were examined through the compari son of the misfit dislocation arrays and moires observed. The results are discussed in relation to the ways in which the island relaxation p rocess changes for high In content.