HIGH QUANTUM EFFICIENCY INP MESAS GROWN BY HYBRID EPITAXY ON SI SUBSTRATES

Selective area liquid phase epitaxy of InP mesas has been performed on masked Si(001) substrates previously overgrown with InP by metalorgan ic chemical vapour deposition (MOCVD). The resulting mesas are bordere d by very smooth crystal facets which are free of defects over typical ly 300 mu m and exhibit an etch pit density of less than or equal to 1 x 10(4) cm(-2). The X-ray rocking curve half width of the mesas amoun ts to 144 arcsec and the quantum efficiency is increased by two orders of magnitude as compared to the underlying InP buffer layer. Thermall y induced strain is observed by triple X-ray analysis to relax anisotr opically in perfect agreement with finite element analysis. These resu lts are encouraging to use the selectively grown mesas as buffer layer s for device structures to be grown in a subsequent MOCVD process step .