GROWTH OF HIGH-PURITY LIQUID-PHASE EPITAXIAL GAAS IN A SILICA GROWTH SYSTEM

Liquid phase epitaxial gallium arsenide layers, greater than 200 mu m thickness and with a low net carrier concentration (N-A,N-D approximat e to 10(13) cm(-3)) have been grown in a silicia growth system with si lica crucibles. Analysis of electrical and chemical defects was carrie d out using capacitance-voltage (C-V) measurements, deep level transie nt spectroscopy (DLTS) and secondary ion mass spectroscopy (SIMS). Det ails of the growth procedure are given and it is shown that silicon in corporation in the growth layer is not suppressed by the addition of p pm levels of oxygen to the main hydrogen flow.