INTERFACIAL LAYER FORMATION ON CORRUGATED INP DURING THE EPITAXIAL-GROWTH OF GAINASP INP DISTRIBUTED-FEEDBACK LASER-DIODE STRUCTURE/

The interfacial layer formed during the soaking procedure of liquid ph ase epitaxy (LPE) growth and the heat-up procedure to the growth tempe rature of metalorganic vapor phase epitaxy (MOVPE) was investigated by transmission electron microscopy (TEM) and energy dispersive spectros copy (EDS). A thin interfacial layer between an epitaxially grown GaIn AsP layer and the concave region of the corrugated InP grating is form ed in LPE growth using a GaAs cover crystal. The thickness of this int erfacial InAsP layer in the concave region of corrugation is increased with increased AsH3 partial pressure and heat-up time in MOVPE. The a rsenic composition in the InAsP layer also increased with increased As H3 partial pressure. Dislocations and defects were not generated in LP E growth using a GaAs cover crystal and using an AsH3 over pressure an d heat-up procedure to the growth temperature in MOVPE.