ELECTRICAL-PROPERTIES OF GESI SURFACE-CHANNEL AND BURIED-CHANNEL P-MOSFETS FABRICATED BY GE IMPLANTATION

The electrical properties of surface- and buried-channel p-MOSFET's co ntaining strained GeSi heterostructures synthesized by high-dose Ge im plantation and solid phase epitaxial growth have been investigated. Co mpared with Si control devices on the same chips, GeSi transistors exh ibited improved performance: the channel hole mobility and linear tran sconductance was up to 18% higher for surface-channel GeSi transistors , and up to 12% higher for buried-channel GeSi p-MOSFET's, than for eq uivalent Si devices. Ion-beam synthesis of GeSi strained layers theref ore offers an attractive means for realising improved device performan ce in conventional Si device structures.