SIMPLIFIED ANALYTICAL QUASI-TRANSPARENT SOLUTION FOR MINORITY-CARRIERTRANSPORT IN NONUNIFORMLY DOPED QUASI-NEUTRAL SEMICONDUCTOR REGIONS

A simple analytical solution, which retains a general dependence of tr ansport parameters on impurity concentration, is presented for minorit y carrier transport, ia nonuniformly doped semiconductor quasineutral regions, The new solution exhibits improved accuracy for high surface recombination velocities over all previous solutions of the same degre e of analytic complexity which retain a general dependence of the tran sport parameters on impurity concentration, while retaining the same d egree of accuracy for low surface recombination velocities as the most accurate of these previous solutions, The proposed solution exhibits accuracy comparable to significantly more complex third order expressi ons which are derived by three iterations using the systematic approac h of Park ct al, [I].