M. Bhatnagar et al., EFFECT OF SURFACE INHOMOGENEITIES ON THE ELECTRICAL CHARACTERISTICS OF SIC SCHOTTKY CONTACTS, I.E.E.E. transactions on electron devices, 43(1), 1996, pp. 150-156
This paper reports analysis of the role of defects on the electrical c
haracteristics of high-voltage 6H-SiC Schottky rectifiers. The measure
d reverse leakage current of high-voltage Ti and Pt rectifiers was fou
nd to he much higher than that predicted by thermionic emission theory
and using a barrier height extracted from the C-Tb measurements. In t
his paper, a model based upon the presence of defects at the 6H-SiC/me
tal interface is used to explains this behavior, It is proposed that t
hese defects result in lowering of the barrier height in the localized
regions and thus, significantly affect the reverse I-V characteristic
s of the Schottky contacts. The presence of electrically active defect
s in the Schottky barrier area has been verified by EBIC studies.