DISTRIBUTION OF BASE DOPANT FOR TRANSIT-TIME MINIMIZATION IN A BIPOLAR-TRANSISTOR

Authors
WINTERTON SS SEARLES S PETERS CJ TARR NG PULFREY DL
Citation
Ss. Winterton et al., DISTRIBUTION OF BASE DOPANT FOR TRANSIT-TIME MINIMIZATION IN A BIPOLAR-TRANSISTOR, I.E.E.E. transactions on electron devices, 43(1), 1996, pp. 170-172
Citations number
9
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
Journal title
I.E.E.E. transactions on electron devices → ACNP
ISSN journal
00189383
Volume
43
Issue
1
Year of publication
1996
Pages
170 - 172
Database
ISI
SICI code
0018-9383(1996)43:1<170:DOBDFT>2.0.ZU;2-N
Abstract
A means to determine the doping profile minimizing base transit time i n a bipolar transistor is presented, assuming that the width of the ne utral base is held constant. It is found that the optimum profile is n ot close to the exponential decrease from emitter to collector predict ed by earlier studies.