HOLE CONFINEMENT IN A SI GESI/SI QUANTUM-WELL ON SIMOX/

Authors
NAYAK DK WOO JCS PARK JS WANG KL MACWILLIAMS KP
Citation
Dk. Nayak et al., HOLE CONFINEMENT IN A SI GESI/SI QUANTUM-WELL ON SIMOX/, I.E.E.E. transactions on electron devices, 43(1), 1996, pp. 180-182
Citations number
15
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
Journal title
I.E.E.E. transactions on electron devices → ACNP
ISSN journal
00189383
Volume
43
Issue
1
Year of publication
1996
Pages
180 - 182
Database
ISI
SICI code
0018-9383(1996)43:1<180:HCIASG>2.0.ZU;2-6
Abstract
In this work, hole confinement in a MBE-grown Si/GeSi/Si quantum well on SIMOX substrate is investigated in detail using device simulation, electronic measurements, and optical techniques. The hole confinement is clearly demonstrated from GeSi PMOSFET measurements. The experiment al results are in good agreement with device simulation results. The q uantum confinement of holes in the GeSi quantum well on SIMOX is confi rmed using photoluminescence measurements.