DEVICE-QUALITY OF IN-SITU PLASMA CLEANING FOR SILICON MOLECULAR-BEAM EPITAXY

Different substrate cleaning procedures were used before fabrication o f pin diodes by silicon molecular beam epitaxy (MBE). We investigated the quality of these diodes in order to demonstrate the superior quali ty of in situ low energy plasma cleaning in ultra-high vacuum (UHV). T he plasma-cleaned substrates can be transported through air and proces sed in another MBE chamber without any additional cleaning steps. More over, the deposited layers are stable to high-temperature treatment (9 00 degrees C) without any degradation effects in device quality.