MAGNETRON SPUTTER EPITAXY OF SI GE HETEROSTRUCTURES/

Radio-frequency magnetron sputter epitaxy was employed for the synthes is of SimGen/Si(001) strained-layer superlattices and of modulation do ped, strained Si quantum wells on relaxed Si0.7Ge0.3. Raman spectrosco py was used to demonstrate that the Ge layers of a Si30Ge6/Si(001) sup erlattice are fully strained and that surprisingly sharp Si/Ge interfa ces of similar to 2-4 ML extension result from the sputter epitaxy. Ma gnetotransport measurements on Si quantum well structures at T = 1.6 K proved the presence of a two-dimensional electron gas with a mobility of 15 800 cm(2) V-1 s(-1) and allowed the observation of the integer quantum Hall effect.