STRAIN COMPENSATION IN TERNARY SI1-X-YGEXBY FILMS

Strain compensation in ternary Si1-x-yGexBy films deposited by RTCVD w ith x = 0.2 and y less than or equal to 0.2 was demonstrated. The stra in estimated by double crystal X-ray diffraction decreases with increa sing boron content due to the decrease of lattice constant by incorpor ation of boron. The boron concentration estimated for the strain compe nsation effect obtained and the density of holes calculated from Raman measurements are smaller than the total amount of incorporated boron. That indicates that only a part of the total boron content is substit utional boron.