HIGH-SPEED SIGE HETEROBIPOLAR TRANSISTORS

SiGe heterobipolar transistors are near the point of commercial availa bility. They will be inserted in mobile phones in the 0.9 to 2.4 GHz r ange and in wireless local area networks using the 2.4 to 5.8 GHz band . The advantage of SiGe HBTs is not only their excellent high frequenc y and noise performance with a maximum frequency of oscillation up to 120 GHz and 0.9 dB noise figure at 10 GHz, but the compatibility of Si Ge to standard silicon technology. Fabrication processes and results o f a research-like SiGe HBT and a possible production type HBT version are described. In addition, some circuit demonstrators for SiGe ICs wi ll be presented.